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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 4, 2010, Pages

Morphology of epitaxial SrTiO3/Si (001) determined using three-dimensional diffraction profile analysis

(5) Segal, Y a Reiner, J W a Zhang, Z b Ahn, C H a Walker, F J a

a Yale University (United States)

b ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION; EPITAXIAL FILMS; LANDFORMS; MORPHOLOGY; SOIL CONSERVATION; STRONTIUM ALLOYS;

CRITICAL THICKNESS; DEVICE PROPERTIES; DIFFRACTION SPOTS; FEATURE-TRACES; GRAIN SHAPES; LARGE SCALE STRUCTURES; LENGTH SCALE; REAL-SPACE; SI DIFFUSION; SI(0 0 1); SRTIO; STEP EDGE; STEP MEANDERING; STRAIN DISTRIBUTIONS; TERRACE STRUCTURE; THREE-DIMENSIONAL DIFFRACTION;

SILICON;

EID: 77957239477 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3420394 Document Type: Conference Paper

Times cited : (2)

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