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Volumn 97, Issue 12, 2010, Pages

Electronic states of InAs/GaAs quantum dots by scanning tunneling spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; GAAS; HETEROSTRUCTURES; INAS; INAS/GAAS; INAS/GAAS QUANTUM DOTS; LINE-SHAPE ANALYSIS; QUANTUM DOTS; SCANNING TUNNELING SPECTROSCOPY; TUNNELING SPECTRA;

EID: 77957116007     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3491551     Document Type: Article
Times cited : (13)

References (14)
  • 9
    • 42149109074 scopus 로고    scopus 로고
    • Band offsets of InGaPGaAs heterojunctions by scanning tunneling spectroscopy
    • DOI 10.1063/1.2902828
    • Y. Dong, R. M. Feenstra, M. P. Semtsiv, and W. T. Masselink, J. Appl. Phys. JAPIAU 0021-8979 103, 073704 (2008) (In the present work values of κ are taken from experiment, with a voltage-averaged value of κ≈7.5 nm-1). 10.1063/1.2902828 (Pubitemid 351537991)
    • (2008) Journal of Applied Physics , vol.103 , Issue.7 , pp. 073704
    • Dong, Y.1    Feenstra, R.M.2    Semtsiv, M.P.3    Masselink, W.T.4
  • 10
    • 0001089438 scopus 로고    scopus 로고
    • PLRBAQ 0556-2805,. 10.1103/PhysRevB.59.5688
    • O. Stier, M. Grundmann, and D. Bimberg, Phys. Rev. B PLRBAQ 0556-2805 59, 5688 (1999). 10.1103/PhysRevB.59.5688
    • (1999) Phys. Rev. B , vol.59 , pp. 5688
    • Stier, O.1    Grundmann, M.2    Bimberg, D.3
  • 13
    • 33646140780 scopus 로고    scopus 로고
    • APPLAB 0003-6951,. 10.1063/1.2193466
    • D. Pal and E. Towe, Appl. Phys. Lett. APPLAB 0003-6951 88, 153109 (2006). 10.1063/1.2193466
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 153109
    • Pal, D.1    Towe, E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.