Simulating single-junction GaAs solar cells including photon recycling

Progress in Photovoltaics: Research and Applications

Volumn 14, Issue 8, 2006, Pages 683-696

  Letay G ^b   Hermle, M ^a   Bett, A W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

III V solar cells; Photon recycling; Simulation

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS;

III-V SOLAR CELLS; INTERNAL STRUCTURES; PHOTON RECYCLING; SOLAR CELL SIMULATION;

SOLAR CELLS;

EID: 33845574621     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.699     Document Type: Article

References (24)

1. Schumacher JO. Numerical simulation of silicon solar cells with novel cell structures, Master thesis, University of Konstanz, 2000.
2. Synopsys, TCAD DESSIS, 8.5 ed., Synopsys LLC, Switzerland (http://www.synopsys.com/), 2003 Manual.
3. MacLeod HA. Thin-Film Optical Filters, 2nd edn. Adam Hilger: Bristol, 1986.
4. Letay G, Breselge M, Bett AW. Calculating the Generation Function of III-V Solar Cells, WCPEC-3, 2003; S. 741-744.
5. Dumke WP. Spontaneous radiative recombination in semiconductors. Physical Review 1957; 105: 139-144.
6. 1-x/As- GaAs heterostructures. Japanese Journal of Applied Physics 1977; 16: 465-477.
7. Durbin SM, Gray JL. Numerical modeling of photon recycling in high efficiency GaAs solar cells. Proceedings of 22nd IEEE Photovoltaic Specialists Conference, 1991; S. 188-191.
8. Asbeck P. Self-absorption effects on the radiative lifetime in GaAs-GaAlAs double heterostructures. Applied Physics, 1977; 48(2): 820-822.
9. Nelson RJ, Sobers RG. Minority-carrier lifetime and internal quantum efficiency of surface- free GaAs. Journal of Applied Physics 1978; 49(12): 6103-6108.
10. Wolfram S. The Mathematica Book. Cambridge University Press: Cambridge, 1999.
11. Maeder R. The Mathematica Programmer. AP Preofessional: Cambridge, 1994.
12. Dicker J, Isenberg J, Warta W. Effect of shunt distribution on the overall solar cell performance investigated by circuit simulation. Proceedings of 17th EU-PVSEC, 2001.
13. Letay G. Modellierung von III-V Solarzellen, Master thesis (in German), University of Konstanz, 2003.
14. Miller KL. Analysis of transient Photoluminescence from AlGaAs/GaAs double heterostructure samples, Master thesis, B.S.E.E. University of Utah, 1989.
15. Parks JWJ, Brennan KF, Smith AW. Numerical examination of photon recycling as an explanation of observed carrier lifetime in direct bandgap materials. Fifth International Workshop on Computational Electronics (IWCS-5), Gordon & Breach, 1997; S. 153-157.
16. Parks JWJ, Brennan KF, Smith AW. Two-dimensional model of photon recycling in direct gap semiconductor devices. Journal of Applied Physics, USA 1978; 82(7): 3493-3498.
17. Balenzategui JL, Marti A, Araujo GL. Numerical Modeling of Photon Recycling Effects in Solar Cells using PC-1d. Proceedings of 13th EU-PVSEC, 1995; S. 1223-1227.
18. Levinshtein ME, Rumyantsev SL, Shur MS (eds). Handbook Series of Semiconductor Parameters, Vol. 1. Si, Ge, C (Diamond), GaAs, GaP, GaSb, InAs, InP, InSb. World Science Publishing Co.: Singapore, 1996.
19. Schröder D. Modelling of Interface Carrier Transport for Device Simulation. Springer-Verlag, Wien: New York, 1994.
20. Horio K, Yanai H. Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface. IEEE Transactions on Electron Devices 1990; 37(4): 1093-1098.
21. Mahan JE, Smirnov GM. A new perspective on distributed series resistance effects in photovoltaic devices. Proceedings of 14th IEEE Photovoltaic Specialists Conference, 1980; S. 612-618.
22. Blieske U. Konzentratorsolarzellen aus Galliumarsenid: Modul- und Tandem-Anwendung. VDI-Verlag GmbH: Düsseldorf, 1995.
23. 5 Semiconductors. World Science Publishing Co,: Singapore, 1996.
24. Sotoodeh M, Khalid AH, Rezazadeh AA. Empirical low-field mobility model for III-V compounds applicable in device simulation codes. Journal of Applied Physics 2000; 87(6): 2890-2900.