Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs

Journal of Applied Physics

Volumn 80, Issue 12, 1996, Pages 6819-6826

  Huang, J W ^a,b   Bray, K L ^a   Kuech, T F ^a  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012899362     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363811     Document Type: Article

References (24)

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