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Volumn 22, Issue 33, 2010, Pages

Transport in carbon nanotube field-effect transistors tuned using low energy electron beam exposure

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR BEHAVIOR; BACK-GATE; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; ELECTRON-BEAM EXPOSURE; LOW ENERGIES; LOW ENERGY ELECTRON BEAMS; NEGATIVE GATE; POSITIVE GATE BIAS; TRANSPORT BEHAVIOR;

EID: 77956892598     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/33/334212     Document Type: Article
Times cited : (3)

References (28)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.