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Volumn 22, Issue 33, 2010, Pages
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Transport in carbon nanotube field-effect transistors tuned using low energy electron beam exposure
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Author keywords
[No Author keywords available]
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Indexed keywords
AMBIPOLAR BEHAVIOR;
BACK-GATE;
CARBON NANOTUBE FIELD-EFFECT TRANSISTORS;
ELECTRON-BEAM EXPOSURE;
LOW ENERGIES;
LOW ENERGY ELECTRON BEAMS;
NEGATIVE GATE;
POSITIVE GATE BIAS;
TRANSPORT BEHAVIOR;
CARBON NANOTUBES;
ELECTRON BEAM LITHOGRAPHY;
ELECTRON BEAMS;
ELECTRON OPTICS;
ELECTRONS;
NANOSENSORS;
FIELD EFFECT TRANSISTORS;
CARBON NANOTUBE;
ARTICLE;
CHEMISTRY;
ELECTRON;
ELECTRON TRANSPORT;
EQUIPMENT;
EQUIPMENT DESIGN;
MATERIALS TESTING;
RADIATION EXPOSURE;
SEMICONDUCTOR;
ULTRASTRUCTURE;
ELECTRON TRANSPORT;
ELECTRONS;
EQUIPMENT DESIGN;
EQUIPMENT FAILURE ANALYSIS;
MATERIALS TESTING;
NANOTUBES, CARBON;
TRANSISTORS, ELECTRONIC;
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EID: 77956892598
PISSN: 09538984
EISSN: 1361648X
Source Type: Journal
DOI: 10.1088/0953-8984/22/33/334212 Document Type: Article |
Times cited : (3)
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References (28)
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