Response of carbon nanotube transistors to electron beam exposure

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1596-1600

  Rius, Gemma ^a   Martín, Iñigo ^a   Godignon, Philippe ^a   Bachtold, Adrian ^a   Bausells, Joan ^a   Lora Tamayo, Emilio ^a   Pérez Murano, Francesc ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Charging; CNT; EFM; Electron beam; Electron solid interaction; FET

Indexed keywords

CARBON NANOTUBES; CHARGE DISTRIBUTION; ELECTRON BEAMS; ELECTRON IRRADIATION; ELECTRON MOBILITY; MICROSCOPIC EXAMINATION;

BEAM ENERGY; ELECTRICAL FORCE MICROSCOPY (EFM); ELECTRON SOLID INTERACTION;

FIELD EFFECT TRANSISTORS;

EID: 34247581828     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.237     Document Type: Article

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