Oligomer semiconductor/dielectric interface modification for organic thin film transistor hysteresis reduction

Thin Solid Films

Volumn 518, Issue 24, 2010, Pages 7381-7384

  Huang, Ting Hsiang ^a   Pei, Zingway ^a   Lin, Wen Kai ^a   Chang, Shu Tong ^a   Liu, Kou Chen ^b  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Hysteresis; Low voltage OTFT; Organic inorganic dielectric

Indexed keywords

ACCUMULATED CHARGE; FREE POLYMERS; HIGH-K MATERIALS; HYDROXYL GROUPS; HYSTERESIS REDUCTION; INTERFACE MODIFICATION; INTERFACE TRAPS; LOW VOLTAGES; OFF CURRENT; ON/OFF CURRENT RATIO; OPERATIONAL VOLTAGE; ORGANIC THIN FILM TRANSISTORS; ORGANIC/INORGANIC; PENTACENES; SUBTHRESHOLD SWING; SURFACE STATE;

FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM OXIDES; HYSTERESIS; OXIDES; POLYSTYRENES; THIN FILMS; WATER ABSORPTION;

THIN FILM TRANSISTORS;

EID: 77956871717     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.05.012     Document Type: Conference Paper

References (27)

1. R.A. Street Adv. Mater. 21 2009 2007
2. D. Braga, and G. Horowitz Adv. Mater. 21 2009 1473
3. A. Benor, A. Hoppe, V. Wagner, and D. Knipp Org. Electron. 8 2007 749
4. D. Simeone, S. Cipolloni, L. Mariucci, M. Rapisarda, A. Minotti, A. Pecora, M. Cuscunà, L. Maiolo, and G. Fortunato Thin Solid Films 517 2009 6283
5. P.F. Baude, D.A. Ender, M.A. Haase, T.W. Kelley, D.V. Muyres, and S.D. Theiss Appl. Phys. Lett. 82 2003 3964
6. K.H. Lee, K. Lee, M.S. Oh, J.-M. Choi, S. Im, S. Jang, and E. Kim Org. Electron. 10 2009 194
7. B. Comiskey, J.D. Albert, H. Yoshizawa, and J. Jacobson Nature 394 1998 253
8. M.H. Yoon, H. Yan, A. Facchetti, and T.J. Marks J. Am. Chem. Soc. 127 2005 10388
9. S.Y. Yang, S.H. Kim, K. Shin, H. Jeon, and C.E. Park Appl. Phys. Lett. 88 2006 173507
10. H. Klauk, U. Zschieschang, J. Pflaum, and M. Halik Nature 445 2007 745
11. M. Halik, H. Klauk, U. Zschieschang, G. Schmid, C. Dehm, M. Schütz, S. Maisch, F. Effenberger, M. Brunnbauer, and F. Stellacci Nature 431 2004 963
12. M.H. Yoon, A. Facchetti, and T.J. Marks PNAS 102 2005 4678
13. J.B. Koo, S.J. Yun, J.W. Lim, S.H. Kim, C.H. Ku, S.C. Lim, J.H. Lee, and T. Zyung Appl. Phys. Lett. 89 2006 033511
14. O. Acton, G. Ting, H. Ma, J.W. Ka, H.-L. Yip, N.M. Tucker, and A.K.-Y. Jen Adv. Mater. 20 2008 3697
15. L. Manchanda, and M. Gurvitch IEEE Electron. Device Lett. 9 1988 180
16. C. Bartic, H. Jansen, A. Campitelli, and S. Borghs Org. Electron. 3 2002 65
17. L.A. Majewski, R. Schroeder, and M. Grell Adv. Mater. 17 2005 192
18. K.P. Pande, V.K.R. Nair, and D. Gutierrez J. Appl. Phys. 54 1983 5436
19. S.H. Kim, S. Nam, J. Jang, K. Hong, C. Yang, D.S. Chung, C.E. Park, and W.-S. Choi J. Appl. Phys. 105 2009 104509
20. S.H. Kim, H. Yang, S.Y. Yang, K. Hong, D. Choi, C. Yang, D.S. Chung, and C.E. Park Org. Electron. 9 2008 673
21. G. Gu, M.G. Kane, J.E. Doty, and A.H. Firester Appl. Phys. Lett. 87 2005 243512
22. G. Gu, M.G. Kane, and S.-C. Mau J. Appl. Phys. 101 2007 014504
23. D.K. Hwang, M.S. Oh, J.M. Hwang, J.H. Kim, and S. Im Appl. Phys. Lett. 92 2008 013304
24. C.A. Lee, D.-W. Park, K.-D. Jung, B.-J. Kim, Y.C. Kim, J.D. Lee, and B.-G. Park Appl. Phys. Lett. 89 2006 262120
25. Y.H. Noh, S.Y. Park, S.-M. Seo, and H.H. Lee Org. Electron. 7 2006 271
26. H. Klauk, M. Halik, U. Zschieschang, G. Schmid, and W. Radlik J. Appl. Phys. 92 2002 5259
27. S.C. Lim, S.H. Kim, J.B. Koo, J.H. Lee, C.H. Ku, Y.S. Yang, and T. Zyung Appl. Phys. Lett. 90 2007 173512