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Volumn 131-132, Issue , 1996, Pages 9-88

Hydrogen-dopant interactions in crystalline semiconductors

(1)  Chevallier, J a  

a CNRS   (France)

Author keywords

AlGaAs; Crystal Growth; Diffusion; Electronic Device Processing; Electronic States; Elemental Semiconductors; GaAs; H Dopant Complexes; Hydrogen; II VI Compound Semiconductors; III V Compound Semiconductors; InP; Silicon

Indexed keywords


EID: 5644246198     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.131-132.9     Document Type: Article
Times cited : (20)

References (351)
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    • Proceedings of the Sixth Trieste Semiconductor Symposium: Hydrogen in Semiconductors
    • North Holland, Amsterdam
    • Proceedings of the Sixth Trieste Semiconductor Symposium: Hydrogen in Semiconductors, ed. M. STUTZMANN and J.CHEVALLIER, (North Holland, Amsterdam, 1991), Physica B 170
    • (1991) Physica B , vol.170
    • Stutzmann, M.1    Chevallier, J.2
  • 16
    • 0004200984 scopus 로고
    • Chapter 12 ed. S.T.PANTELIDES Gordon and Breach Science Publishers
    • C.G. VAN DE WALLE: Chapter 12 of Deep Centers in Semiconductors, ed. S.T.PANTELIDES (Gordon and Breach Science Publishers, 1992)
    • (1992) Deep Centers in Semiconductors
    • Van De Walle, C.G.1
  • 19
    • 0028599026 scopus 로고
    • Hydrogen in Compound Semiconductors
    • Trans Tech. Publications
    • Hydrogen in Compound Semiconductors, ed. S.J.PEARTON, (Trans Tech. Publications) Mater. Sci. Forum, 148-149 (1994)
    • (1994) Mater. Sci. Forum , vol.148-149
    • Pearton, S.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.