Optimization of thermoelectric properties of type-VIII clathrate Ba 8Ga16Sn30 by carrier tuning

Journal of Alloys and Compounds

Volumn 507, Issue 1, 2010, Pages 1-5

  Saiga, Y ^a   Suekuni, K ^a   Deng, S K ^a   Yamamoto, T ^a   Kono, Y ^b   Ohya, N ^b   Takabatake, T ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b Denso Crporation Research Laboratories   (Japan)

Author keywords

Carrier tuning; Thermoelectric figure of merit ZT; Thermoelectric properties; Type VIII clathrate

Indexed keywords

ABSOLUTE VALUES; CARRIER DOPING; CARRIER TUNING; CRYSTAL COMPOSITION; DOPED SAMPLE; ELECTRICAL RESISTIVITY; FLUX AMOUNT; GA CONTENT; GA FLUX; MAXIMUM VALUES; P-TYPE; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES; TYPE-VIII CLATHRATE;

BARIUM; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GALLIUM; HYDRATES; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TIN; TUNING;

SINGLE CRYSTALS;

EID: 77956617546     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.07.121     Document Type: Article

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