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Volumn 107, Issue 12, 2010, Pages

First-principles study of type-I and type-VIII Ba8Ga 16Sn30 clathrates

(7) Kono, Yasushi a,b Ohya, Nobuyuki a Taguchi, Takashi a Suekuni, Koichiro c Takabatake, Toshiro c Yamamoto, Setsuo b Akai, Koji b

a DENSO CORPORATION (Japan)

b YAMAGUCHI UNIVERSITY (Japan)

c HIROSHIMA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CLATHRATES; DENSITY OF STATE; ELECTRICAL CONDUCTIVITY; FIRST-PRINCIPLES STUDY; INDIRECT SEMICONDUCTOR; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES;

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; HYDRATES; THERMOELECTRIC EQUIPMENT; TIN;

BARIUM;

EID: 77954208088 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3437252 Document Type: Article

Times cited : (48)

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