Characterization of AgInSe2 films deposited by hot-wall vacuum evaporation method

Materials and Manufacturing Processes

Volumn 25, Issue 9, 2010, Pages 1012-1017

  Pathak, Dinesh ^a   Bedi, R K ^a   Kaur, Davinder ^b  

^a GURU NANAK DEV UNIVERSITY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY ROORKEE   (India)

Author keywords

Atomic force microscopy; Optical properties of thin films; Semiconductors; X ray diffraction

Indexed keywords

BAND GAPS; CRYSTAL-FIELD SPLITTING; FUNDAMENTAL ABSORPTION EDGE; GLASS SUBSTRATES; HOT-WALL VACUUM EVAPORATIONS; LOW TEMPERATURES; OPTICAL PROPERTIES OF THIN FILMS; SEMICONDUCTORS; SOURCE MATERIAL; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE TEMPERATURE; THERMODYNAMIC EQUILIBRIA;

ATOMIC FORCE MICROSCOPY; CRYSTALLITE SIZE; DIFFRACTION; OPTICAL PROPERTIES; OVENS; QUARTZ; SEMICONDUCTOR GROWTH; STOVES; SUBSTRATES; TEMPERATURE; THIN FILMS; VACUUM EVAPORATION; X RAY DIFFRACTION; X RAYS;

OPTICAL FILMS;

EID: 77956548014     PISSN: 10426914     EISSN: 15322475     Source Type: Journal    
DOI: 10.1080/10426910903367360     Document Type: Article

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