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Journal of Crystal Growth

Volumn 312, Issue 20, 2010, Pages 3046-3049

Epitaxial growth of tin oxide film on TiO2(1 1 0) using molecular beam epitaxy

(3) Hishita, Shunichi a Janeček, Petr a Haneda, Hajime a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

A1. Pressure dependence; A3. Epitaxy; A3. Molecular beam epitaxy; B1. Tin oxide

Indexed keywords

A3. EPITAXY; A3. MOLECULAR BEAM EPITAXY; ATOMIC STEP; B1. TIN OXIDE; CRYSTAL FACETS; DEPOSITION CONDITIONS; FINE GRAINS; GAS PRESSURES; METAL PHASE; NITROGEN DIOXIDES; POROUS STRUCTURES; PRESSURE DEPENDENCE; PROPERTIES OF DEPOSITED FILMS; SMOOTH SURFACE; SUBSTRATE TEMPERATURE; TIN ATOMS; TIN OXIDE THIN FILM; TIO; XPS DATA;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ATOMS; EPITAXIAL GROWTH; FILM GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITROGEN OXIDES; SUBSTRATES; TIN; TIN DIOXIDE; TIN OXIDES; TITANIUM; TITANIUM DIOXIDE; TITANIUM OXIDES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 77956410113 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.07.012 Document Type: Article

Times cited : (15)

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