Novel route to scalable synthesis of II-VI semiconductor nanowires: Catalyst-assisted vacuum thermal evaporation

Journal of Crystal Growth

Volumn 312, Issue 20, 2010, Pages 2852-2856

  Yang, Linyu ^a   Wang, W J ^b   Song, B ^c   Wu, R ^a   Li, J ^a   Sun, Y F ^a   Shang, F ^a   Chen, X L ^b   Jian, J K ^a  

^a XINJIANG UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

^c HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

A1. Crystal morphology; A1. Nanosctructures; A2. Growth from vapor; B2. Semiconducting II VI materials

Indexed keywords

A1. NANOSCTRUCTURES; CDS; CDTE; CRYSTAL MORPHOLOGIES; FABRICATING TECHNIQUES; GROWTH FROM VAPORS; GROWTH MECHANISMS; HIGH QUALITY; II-VI SEMICONDUCTOR; LOW COSTS; LOW MELTING; MASS PRODUCTION; MATERIAL SYSTEMS; NOVEL ROUTE; SCALABLE SYNTHESIS; SEMICONDUCTING II-VI MATERIALS; SINGLE CRYSTALLINE NANOWIRES; STRUCTURAL AND OPTICAL PROPERTIES; VACUUM THERMAL EVAPORATION; VAPOR-LIQUID-SOLID PROCESS;

BISMUTH; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CATALYSTS; GROUND STATE; INDUSTRIAL APPLICATIONS; MORPHOLOGY; NANOWIRES; OPTICAL PROPERTIES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; TIN; TITANIUM COMPOUNDS; VACUUM; VACUUM EVAPORATION; VAPORS; ZINC SULFIDE;

THERMAL EVAPORATION;

EID: 77956402984     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.06.032     Document Type: Article

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