Effects of gate electrode work function on electrical characteristics of pentacene-based field-effect devices

Applied Physics Letters

Volumn 97, Issue 9, 2010, Pages

  Park, Jaehoon ^a   Kim, Hey Min ^b   Kim, Dong Wook ^a   Choi, Jong Sun ^a  

^a Hong Ik University   (South Korea)

^b LG   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACID TREATMENTS; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT DEVICES; FLAT BAND; FLAT-BAND VOLTAGE SHIFT; GATE ELECTRODES; INDIUM TIN OXIDE; METAL INSULATOR SEMICONDUCTOR CAPACITORS; MIS CAPACITORS; PENTACENES;

CAPACITORS; ELECTROLYTIC CAPACITORS; INDIUM COMPOUNDS; MESFET DEVICES; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICES; TIN; TIN OXIDES; TITANIUM COMPOUNDS; WORK FUNCTION;

FIELD EFFECT TRANSISTORS;

EID: 77956369334     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3486180     Document Type: Article

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