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Volumn 81, Issue 24, 2010, Pages

Dielectric-permittivity-driven charge carrier modulation at oxide interfaces

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EID: 77956328764     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.241308     Document Type: Article
Times cited : (10)

References (19)
  • 11
    • 77956317076 scopus 로고    scopus 로고
    • See supplementary material at
    • See supplementary material at http://link.aps.org/supplemental/10.1103/ PhysRevB.81.241308 for (a) information regarding the quality of the samples including RHEED specular spot intensity oscillations during deposition and an atomic force micrograph taken after growth, (b) sheet resistance of films with different LAO thicknesses on top of 5 ML La:STO to be compared to Fig. where 10 ML La:STO was deposited, and (c) hysteretic effects measured in the sheet resistance during warming at specific temperatures, which could point to the origin of the charge carriers at the LAO/La:STO interface.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.