Preparation of pristine and Ba-doped C60 films by hot-wall epitaxy

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 828-836

  Sitter, H ^a   Stifter, D ^a   Nguyen Manh, T ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

BaxC60 compounds; C60 epilayers; Hot wall epitaxy

Indexed keywords

ANNEALING; BARIUM; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE MEASUREMENT; EPITAXIAL GROWTH; PHASE EQUILIBRIA; PRESSURE TUBE REACTORS; SUPERCONDUCTING FILMS; THERMODYNAMICS; VAPOR PRESSURE;

HOT WALL EPITAXY (HWE); PRISTINE; VAN DER WAALS EPITAXY;

FULLERENES;

EID: 0031547388     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00062-6     Document Type: Article

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