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Volumn 97, Issue 8, 2010, Pages

Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001)

(5) Arora, Ashish a Ghosh, Sandip a Arora, B M a,c Malzer, Stefan b Döhler, Gottfried b

a TATA INSTITUTE OF FUNDAMENTAL RESEARCH (India)

b MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT (Germany)

c INDIAN INSTITUTE OF TECHNOLOGY BOMBAY (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRAIN; DEVICE STRUCTURES; EXCITON TRANSITIONS; GAAS(001); GAAS/ALGAAS QUANTUM WELL; IN-PLANE; LIGHT HOLE EXCITON; LIGHT INCIDENT; LOW-TEMPERATURE GROWN; MESA DEVICES; NARROW WIDTH; OPTICAL POLARIZATION; POLARIZATION ANISOTROPY; POLARIZATION SENSITIVE; QUANTUM WELL; VALENCE BAND MIXING;

ANISOTROPY; EXCITONS; GALLIUM ALLOYS; GALLIUM ARSENIDE; LIGHT POLARIZATION; PHOTOCONDUCTIVITY; POLARIZATION; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77956216055 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3479501 Document Type: Article

Times cited : (4)

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