Reflection high-energy electron diffraction φ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy

Applied Physics Letters

Volumn 97, Issue 3, 2010, Pages

  Gao, Cunxu ^a   Schönherr, Hans Peter ^a   Brandt, Oliver ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL ORIENTATIONS; EX SITU; FE FILMS; HETEROEPITAXIAL FILMS; HETEROEPITAXIAL GROWTH; IN-PLANE ORIENTATION; IN-SITU; IN-SITU MONITORING; QUANTITATIVE DETERMINATIONS;

ELECTRON DIFFRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ENERGY PHYSICS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

EPITAXIAL GROWTH;

EID: 77956206324     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3467136     Document Type: Article

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