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Diamond and Related Materials

Volumn 19, Issue 10, 2010, Pages 1153-1162

Simulations of large multi-atom vacancies in diamond

(4) Laszlo, Istvan a Kertesz, Miklos b Slepetz, Brad b Gogotsi, Yury c

a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS (Hungary)

b GEORGETOWN UNIVERSITY (United States)

c Drexel University (United States)

Author keywords

Dacancy; Diamond; Graphitization; Modeling; Vacancy cluster

Indexed keywords

DACANCY; DESCRIPTORS; ENERGY LEVEL; FORMATION MECHANISM; MODELING; NANO-SIZE; ORBITALS; RELAXED GEOMETRY; STABLE STRUCTURES; STABLE VACANCY; SURFACE STATE; TIGHT BINDING; VACANCY CLUSTER;

DENSITY FUNCTIONAL THEORY; DIAMONDS; GRAPHITE; GRAPHITIZATION; RADIATION DAMAGE;

VACANCIES;

EID: 77956057946 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2010.05.001 Document Type: Article

Times cited : (10)

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