Magic Numbers of Multivacancy in Crystalline Si: Tight-Binding Studies for the Stability of the Multivacancy

Journal of the Physical Society of Japan

Volumn 67, Issue 12, 1998, Pages 4110-4116

  Akiyama, Toru ^b   Oshiyama, Atsushi ^b   Sugino, Osamu ^a,b  

^a NEC CORPORATION   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Binding energy; Dangling bonds; Dissociation energy; Formation energy; Lattice relaxation; Multivacancy; Pairing distortion

Indexed keywords

EID: 0032265478     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.67.4110     Document Type: Article

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24. In all calculations Γ point sampling for Brillouin zone integration have been used. We have carried out the geometry optimization until remaining forces acting on atoms become less than 0.002 Ry/Å.
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