Low-noise visible-blind photodetectors based on SrTiO3 single crystal with transparent indium tin oxide electrode as window

Applied Optics

Volumn 49, Issue 14, 2010, Pages 2557-2560

  Guo, Er Jia ^a   Lu, Hui Bin ^a   He, Meng ^a   Xing, Jie ^a,b   Jin, Kui Juan ^a   Yang, Guo Zhen ^a  

^a INSTITUTE OF PHYSICS   (China)

^b CHINA UNIVERSITY OF GEOSCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; ELECTRODES; ELECTROMAGNETIC SHIELDING; ENERGY GAP; INDIUM; PHOTODETECTORS; PHOTONS; SINGLE CRYSTALS; TIN;

BAND-GAP EXCITATION; EPITAXIALLY GROWN; INDIUM TIN OXIDE; INDIUM TIN OXIDE ELECTRODES; PEAK RESPONSIVITY; ULTRA-VIOLET PHOTODETECTORS; UV PHOTODETECTORS; WIDE BAND-GAP MATERIAL;

TIN OXIDES;

EID: 77955967267     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.49.002557     Document Type: Article

References (19)

1. A. Osinsky, S. Gangopadhyay, B. W. Lim, M. Z. Anwar, M. A. Khan, D. V. Kuksenkov, and H. Temkin, "Schottky barrier photodetectors based on AlGaN", Appl. Phys. Lett. 72, 742-744 (1998).
2. T. Tut, T. Yelboga, E. Ulker, and E. Ozbay, "Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity", Appl. Phys. Lett. 92, 103502 (2008).
3. H. Jiang and T. Egawa, "High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template", Appl. Phys. Lett. 90, 121121 (2007).
4. E. Muñoz, E. Monroy J. A. Garrido, I. Izpura, F. J. Sánchez, M. A. Sánchez-García, E. Calleja, B. Beaumont, and P. Gibart, "Photoconductor gain mechanisms in GaN ultraviolet detectors", Appl. Phys. Lett. 71, 870-872 (1997).
5. M. Mikulics, M. Marso, P. Javorka, P. Kordo, and H. Lüth, "Ultrafast metal-semiconductor-metal photodetectors on low-temperature- grown GaN", Appl. Phys. Lett. 86, 211110 (2005).
6. A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, "193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors", Appl. Phys. Lett. 92, 053501 (2008).
7. P. Sharma, K. Sreenivas, and K. V. Rao, "Analysis of ultraviolet photoconductivity in ZnO films prepared by unbalanced magnetron sputtering", J. Appl. Phys. 93, 3963-3970 (2003).
8. A. Balducci, M. Marinelli, E. Milani, M. E. Morgada, A. Tucciarone, and G. Verona-Rinati, "Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition", Appl. Phys. Lett. 86, 193509 (2005).
9. 3 single crystals", Appl. Phys. Lett. 89, 173507 (2006).
10. 3 single crystal", Opt. Lett. 32, 2526-2528 (2007).
11. 3 single crystal", Opt. Lett. 34, 1675-1677 (2009).
12. 3 single crystal", J. Appl. Phys. 106, 023114 (2009).
13. 3 single crystal", J. Phys. D 43, 015402 (2010).
14. Y. Z. Chiou and J. J. Tang, "GaN photodetectors with transparent indium tin oxide electrodes", Jpn. J. Appl. Phys. 43, 4146-4149 (2004).
15. M. L. Lee, P. F. Chi, and J. K. Sheu, "Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio", Appl. Phys. Lett. 94, 013512 (2009).
16. W. S. Jahng, A. H. Francis, H. Moon, J. I. Nanos, and M. D. Curtis, "Is indium tin oxide a suitable electrode in organic solar cells? Photovoltaic properties of interfaces in organic p/n junction photodiodes", Appl. Phys. Lett. 88, 093504 (2006).
17. G. Z. Yang, H. B. Lu, F. Chen, T. Zhao, and Z. H. Chen, "Laser molecular beam epitaxy and characterization of perovskite oxide thin films", J. Cryst. Growth 227, 929 (2001).
18. M. Razeghi and A. Rogalski, "Semiconductor ultraviolet detectors", J. Appl. Phys. 79, 7433-7473 (1996).
19. T. Palacios, E. Monroy, F. Calle, and F. Omnes, "Highresponsivity submicron metal-semiconductor-metal ultraviolet detectors", Appl. Phys. Lett. 81, 1902-1904 (2002).