Selective photocurrent generation in the transparent wavelength range of a semiconductor photovoltaic device using a phonon-assisted optical near-field process

Applied Physics B: Lasers and Optics

Volumn 99, Issue 3, 2010, Pages 415-422

  Yukutake, S ^a   Kawazoe, T ^a   Yatsui, T ^a   Nomura, W ^a   Kitamura, K ^a   Ohtsu, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AG FILMS; DC ELECTRIC FIELD; FABRICATED DEVICE; INCIDENT LIGHT; LIGHT ILLUMINATION; LONG WAVELENGTH; N-TYPE SEMICONDUCTORS; OPTICAL NEAR FIELD; P-N JUNCTION; P-TYPE; PHONON ASSISTED PROCESS; PHOTOCURRENT GENERATIONS; PHOTOVOLTAIC DEVICES; REVERSE BIAS; RF-SPUTTERING; SELF-ORGANIZED; TEST MATERIALS; WAVELENGTH RANGES; ZNO;

ELECTRIC FIELDS; PHONONS; PHOTOCURRENTS; PHOTOVOLTAIC EFFECTS; SPECTROSCOPY; WAVELENGTH; ZINC OXIDE;

SILVER;

EID: 77955927356     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-010-3999-5     Document Type: Article

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