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Volumn 59, Issue 8, 2010, Pages 5652-5660
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A first principle study on p-type doped 3C-SiC
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Author keywords
Doping; Electronic structure; SiC; VASP
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Indexed keywords
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EID: 77955835981
PISSN: 10003290
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (14)
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References (19)
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