Excitonic binding energies in non-polar GaN quantum wells

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1900-1902

  Schulz, Stefan ^a   O'Reilly, Eoin P ^a,b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Excitons; GaN; Optical properties; Quantum wells; Theory

Indexed keywords

CONDUCTION BAND OFFSET; EXCITON ENERGIES; EXCITONIC BINDING; EXPERIMENTAL ANALYSIS; FRACTIONAL-DIMENSIONAL; GAAS/ALGAAS; GAN; GAN/ALGAN QUANTUM WELLS; NON-POLAR; NON-POLAR GAN; QUANTUM WELL; SINGLE PARTICLE STATE; THEORY; VALENCE BAND OFFSETS; WELL WIDTH;

CONDUCTION BANDS; ELECTRON MOBILITY; EXCITONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; NUCLEAR ENERGY; OPTICAL PROPERTIES; POTENTIAL ENERGY; SEMICONDUCTOR QUANTUM WELLS;

BINDING ENERGY;

EID: 77955783224     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983594     Document Type: Conference Paper

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