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Volumn 97, Issue 6, 2010, Pages

Carrier dynamics of Mg-doped indium nitride

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DYNAMICS; DECAY TIME CONSTANT; ELECTRON DENSITIES; INDIUM NITRIDE; MG-DOPED; TERAHERTZ EMISSIONS; TERAHERTZ RADIATION; TIME-RESOLVED REFLECTIVITIES; ULTRA-FAST;

EID: 77955729407     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3479523     Document Type: Article
Times cited : (7)

References (16)
  • 4
    • 27844447281 scopus 로고    scopus 로고
    • Hole transport and carrier lifetime in InN epilayers
    • DOI 10.1063/1.2133892, 212104
    • F. Chen, A. N. Cartwright, H. Lu, and W. J. Schaff, Appl. Phys. Lett. APPLAB 0003-6951 87, 212104 (2005). 10.1063/1.2133892 (Pubitemid 41643361)
    • (2005) Applied Physics Letters , vol.87 , Issue.21 , pp. 1-3
    • Chen, F.1    Cartwright, A.N.2    Lu, H.3    Schaff, W.J.4
  • 8
    • 34547302357 scopus 로고    scopus 로고
    • Ultrafast hot electron relaxation time anomaly in InN epitaxial films
    • DOI 10.1063/1.2751110
    • T. -R. Tsai, C. -F. Chang, and S. Gwo, Appl. Phys. Lett. APPLAB 0003-6951 90, 252111 (2007). 10.1063/1.2751110 (Pubitemid 47141210)
    • (2007) Applied Physics Letters , vol.90 , Issue.25 , pp. 252111
    • Tsai, T.-R.1    Chang, C.-F.2    Gwo, S.3
  • 13
    • 60749124999 scopus 로고    scopus 로고
    • APPLAB 0003-6951,. 10.1063/1.3086888
    • Y. -M. Chang and S. Gwo, Appl. Phys. Lett. APPLAB 0003-6951 94, 071911 (2009). 10.1063/1.3086888
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 071911
    • Chang, Y.-M.1    Gwo, S.2
  • 15
    • 35548950284 scopus 로고    scopus 로고
    • Terahertz spectroscopic study of vertically aligned InN nanorods
    • DOI 10.1063/1.2800292
    • H. Ahn, Y. -P. Ku, C. -H. Chuang, C. -L. Pan, H. -W. Lin, Y. -L. Hong, and S. Gwo, Appl. Phys. Lett. APPLAB 0003-6951 91, 163105 (2007). 10.1063/1.2800292 (Pubitemid 350004054)
    • (2007) Applied Physics Letters , vol.91 , Issue.16 , pp. 163105
    • Ahn, H.1    Ku, Y.-P.2    Wang, Y.-C.3    Chuang, C.-H.4    Gwo, S.5    Pan, C.-L.6
  • 16
    • 20844462397 scopus 로고    scopus 로고
    • Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations
    • DOI 10.1063/1.1929097, 201905
    • H. Ahn, C. -H. Shen, C. -L. Wu, and S. Gwo, Appl. Phys. Lett. APPLAB 0003-6951 86, 201905 (2005). 10.1063/1.1929097 (Pubitemid 40860995)
    • (2005) Applied Physics Letters , vol.86 , Issue.20 , pp. 1-3
    • Ahn, H.1    Shen, C.-H.2    Wu, C.-L.3    Gwo, S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.