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Volumn 95, Issue 23, 2009, Pages

Terahertz emission mechanism of magnesium doped indium nitride

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL CONCENTRATION; DOMINANT CONTRIBUTIONS; EMISSION MECHANISM; INDIUM NITRIDE; OPTICAL ABSORPTION; PHOTO-DEMBER FIELD; POSITIVE POLARITY; SURFACE BAND BENDING; SURFACE ELECTRIC FIELDS; SURFACE LAYERS; TERAHERTZ EMISSIONS; TERAHERTZ SIGNALS;

EID: 71949129363     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3270042     Document Type: Article
Times cited : (20)

References (17)
  • 2
    • 34249002801 scopus 로고    scopus 로고
    • Growth and properties of Mg-doped In-polar InN films
    • DOI 10.1063/1.2741124
    • X. Wang, S. -B. Che, Y. Ishitani, and A. Yoshikawa, Appl. Phys. Lett. 0003-6951 90, 201913 (2007). 10.1063/1.2741124 (Pubitemid 46793988)
    • (2007) Applied Physics Letters , vol.90 , Issue.20 , pp. 201913
    • Wang, X.1    Che, S.-B.2    Ishitani, Y.3    Yoshikawa, A.4
  • 8
    • 38349156831 scopus 로고    scopus 로고
    • Resonant terahertz generation from InN thin films
    • DOI 10.1364/OL.32.001423
    • X. Mu, Y. Ding, K. Wang, D. Jena, and Y. B. Zotova, Opt. Lett. 0146-9592 32, 1423 (2007). 10.1364/OL.32.001423 (Pubitemid 351292755)
    • (2007) Optics Letters , vol.32 , Issue.11 , pp. 1423-1425
    • Mu, X.1    Ding, Y.J.2    Wang, K.3    Jena, D.4    Zotova, Y.B.5
  • 17
    • 20844462397 scopus 로고    scopus 로고
    • Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations
    • DOI 10.1063/1.1929097, 201905
    • H. Ahn, C. -H. Shen, C. -L. Wu, and S. Gwo, Appl. Phys. Lett. 0003-6951 86, 201905 (2005). 10.1063/1.1929097 (Pubitemid 40860995)
    • (2005) Applied Physics Letters , vol.86 , Issue.20 , pp. 1-3
    • Ahn, H.1    Shen, C.-H.2    Wu, C.-L.3    Gwo, S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.