Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 474-478

  Meneghesso, G ^a   Levada, S ^a   Zanoni, E ^a   Salviati, G ^b   Armani, N ^b   Rossi, F ^b   Pavesi, M ^c   Manfredi, M ^c   Cavallini, A ^d   Castaldini, A ^d   Du, S ^e   Eliashevich, I ^e  

^a UNIVERSITY OF PADOVA   (Italy)

^b IMEM CNR   (Italy)

^c UNIVERSITY OF PARMA   (Italy)

^d UNIVERSITY OF BOLOGNA   (Italy)

^e GELcore LLC   (United States)

Author keywords

Deep levels; DLTS; Doping profile; Gallium Nitride; GaN; Hydrogen; LED; Magnesium; Reliability

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; GALLIUM NITRIDE; HYDROGEN; LIGHT EMITTING DIODES; MAGNESIUM; SEMICONDUCTOR QUANTUM WELLS; TESTING;

ACCELERATED LIFE TESTS; BIASING CURRENT; DEEP-LEVELS; DOPING PROFILES; FAILURE MECHANISM; GAN; GAN BASED LED; INGAN/GAN LEDS;

RELIABILITY;

EID: 77955716971     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315374     Document Type: Conference Paper

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