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Because of the anisotropy of the conducting material, a four probe measurement was not applied. The I-V characteristics curve in the darkness is unchanged in reference to the bulb lighted sample. Therefore, since the conducting properties are strongly determined by the Schottky-contact resistance at the semiconductor-metal interface, we also do not derive any physical data from these experiments at this point, and we do not discuss a participation of the photo excited state in the charge transport mechanism based on these preliminary experiments. The characterization of the electrical conductivity requires more experimental and theoretical work, and therefore this preliminary conductivity experiment proves only the general conductance and the applicability for device fabrication of the material
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Because of the anisotropy of the conducting material, a four probe measurement was not applied. The I-V characteristics curve in the darkness is unchanged in reference to the bulb lighted sample. Therefore, since the conducting properties are strongly determined by the Schottky-contact resistance at the semiconductor-metal interface, we also do not derive any physical data from these experiments at this point, and we do not discuss a participation of the photo excited state in the charge transport mechanism based on these preliminary experiments. The characterization of the electrical conductivity requires more experimental and theoretical work, and therefore this preliminary conductivity experiment proves only the general conductance and the applicability for device fabrication of the material.
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