Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes

Solid-State Electronics

Volumn 54, Issue 11, 2010, Pages 1479-1484

  Jander, Albrecht ^a   Dhagat, Pallavi ^a  

^a OREGON STATE UNIVERSITY   (United States)

Author keywords

Electrically detected magnetic resonance; Magnetometer; Sensor; Spin dependent recombination

Indexed keywords

CURRENT SENSING; ELECTRICALLY DETECTED MAGNETIC RESONANCES; MAGNETIC FIELD SENSITIVITY; MAGNETIC FIELD SENSORS; NON-CONTACT; ON CURRENTS; POSITION SENSORS; RESONANT MAGNETIC FIELD SENSORS; SILICON DIODES; SPIN-DEPENDENT RECOMBINATION;

EXCITONS; MAGNETIC FIELDS; MAGNETIC RESONANCE; MAGNETIC SENSORS; MAGNETOMETERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SENSITIVITY ANALYSIS; SILICON DETECTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955661992     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.06.002     Document Type: Article

References (33)

1. R. Maxwell, and A. Honig Neutral-impurity scattering experiments in silicon with highly spin-polarized electrons Phys Rev Lett 7 1966 188 190
2. J. Schmidt, and I. Solomon Modulation de la photocunductivité dans le silícium basse température par résonance magnétique électronique des impurités peu profondes CR Acad Sci Paris Ser B 263 1966 169 172
3. D.J. Lepine Spin-dependent recombination on silicon surface Phys Rev B 6 1972 436
4. L.H.W.v. Beveren, H. Huebl, D.R. McCamey, T. Duty, A.J. Ferguson, and R.G. Clark Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor Appl Phys Lett 93 2008 072102
5. 2 interface IEEE Trans Nucl Sci 36 1989 1800 1807
6. P.M. Lenahan, and M.J. Jupina Spin dependent recombination at the silicon/silicon dioxide interface Colloids Surf 45 1990 191 211
7. I. Solomon, D. Biegelsen, and J.C. Knights Spin-dependent photoconductivity in n-type and p-type amorphous silicon Solid State Commun 22 1977 505 508
8. T. Umeda, Y. Mochizuki, K. Okonogi, and K. Hamada Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits J Appl Phys 94 2003 7105 7111
9. L.S. Vlasenko, Y.V. Martynov, T. Gregorkiewicz, and C.A.J. Ammerlaan Electron paramagnetic resonance versus spin-dependent recombination: excited triplet states of structural defects in irradiated silicon Phys Rev B 52 1995 1144
10. 2 device structures Appl Phys Lett 52 1988 1161 1163
11. D. Vuillaume, D. Deresmes, and D. Stievenard Temperature-dependent study of spin-dependent recombination at silicon dangling bonds Appl Phys Lett 64 1994 1690 1692
12. Z. Xiong, and D.J. Miller Detailed investigation of a nonradiative recombination center in Si by electrically detected magnetic resonance J Appl Phys 77 1995 5201 5207
13. T. Umeda, Y. Mochizuki, K. Okonogi, and K. Hamada Defects related to DRAM leakage current studied by electrically detected magnetic resonance Phys B: Condens Matter 308 2001 1169 1172
14. D. Kaplan, I. Solomon, and N.F. Mott Explanation of the large spin-dependent recombination effect in semiconductors J Phys Lett 39 1978 L51 L54
15. A.V. Barabanov, V.A. Lvov, and O.V. Tretyak About the mechanisms of spin-dependent recombination in semiconductors Phys Status Solidi b 207 1998 419 427
16. A.V. Barabanov, O.V. Tretiak, and V.A. Lâvov Complete theoretical analysis of the Kaplan-Solomon-Mott mechanism of spin-dependent recombination in semiconductors Phys Rev B 54 1996 2571
17. W. Shockley, and W.T. Read Statistics of the recombinations of holes and electrons Phys Rev 87 1952 835
18. R.N. Hall Electron-hole recombination in germanium Phys Rev 87 1952 387
19. G.J. Rees, H.G. Grimmeiss, E. Janzen, and B. Skarstam Capture, emission and recombination at a deep level via an excited state J Phys C: Solid State Phys 13 1980 6157 6165
20. Z. Xiong, and D.J. Miller General expression for the electrically detected magnetic resonance signal from semiconductors Appl Phys Lett 63 AIP 1993 352 354
21. V.S. L'vov, O.V. Tretyak, and J.A. Kolomiets Spin-dependent carrier recombination on a silicon surface Sov Phys Semicond 11 1977 661
22. I. Solomon Spin-dependent recombination in a silicon p-n junction Solid State Commun 20 1976 215 217
23. Z. Xiong, and D.J. Miller Identification of the common electrically detected magnetic resonance signal from a Si diode J Appl Phys 78 1995 4895
24. Z. Kachwalla, and D.J. Miller The spin-dependent resonance signal from silicon J Appl Phys 62 1987 2848 2852
25. T. Sato, H. Yokoyama, H. Ohya, and H. Kamada Electrically detected magnetic resonance signal intensity at resonant frequencies from 300 to 900 MHz in a constant microwave field J Magn Reson 139 1999 422 429
26. T. Sato, H. Yokoyama, H. Ohya, and H. Kamada Development and evaluation of an electrically detected magnetic resonance spectrometer operating at 900 MHz Rev Sci Instrum 71 2000 486 493
27. O.I. Kozonushchenko, V.V. Kislyuk, A.V. Barabanov, and O.V. Tretyak Zero field spin-dependent recombination J Supercond: Incorporat Novel Magn 16 2003 431 433
28. P. Christmann, W. Stadler, and B.K. Meyer Temperature dependent electrically detected magnetic resonance studies on silicon pn diodes Appl Phys Lett 66 1995 1521 1523
29. F.C. Rong, W.R. Buchwald, E.H. Poindexter, W.L. Warren, and D.J. Keeble Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes Solid-State Electron 34 1991 835 841
30. M.S. Brandt, R. Neuberger, and M. Stutzmann Capacitively detected magnetic resonance of defects in MOSFETs Phys B: Condens Matter 273-274 1999 1027 1030
31. A. Honig, and M. Moroz Precision absolute measurements of strong and highly inhomogeneous magnetic fields Rev Sci Instrum 49 1978 183 187
32. Jander A, Dhagat P. Solid-state magnetometer using electrically detected magnetic resonance. J Magn Magn Mater, in press. doi:10.1016/j.jmmm.2009.05.015, 2009.
33. J.W. Chen, and A.G. Milnes Energy levels in silicon Annu Rev Mater Sci 10 1980 157 228