3D integration techniques applied to SiGe power amplifiers

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 1053-1067

  Malladi, Ramana ^a   Joseph, Alvin ^a   Lindgren, Peter ^a   Ni, Wan ^a   Wang, Dawn ^a   Ding, Hanyi ^a   Erturk, Mete ^a   Previti Kelly, Rosemary ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH ALLOYS; ELECTRONICS PACKAGING; GERMANIUM COMPOUNDS; INDUCTANCE; POWER AMPLIFIERS; SI-GE ALLOYS; WIMAX;

3-D INTEGRATION; HIGHER FREQUENCIES; LOW INDUCTANCE; LOW-COST PLASTICS; RF PERFORMANCE; SIGE BICMOS TECHNOLOGY; SIGE POWER AMPLIFIERS; THROUGH-SILICON-VIA (TSV);

THREE DIMENSIONAL INTEGRATED CIRCUITS;

EID: 63449102802     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986868     Document Type: Conference Paper

References (7)

1. S. Koester et.al., IBM Journal of Research and Development, 2008
2. W. Bischof, M. Alles, S. Gerlach, A. Kruck, A. Schuppen, J. Sinderhauf, and H.-J. Wassener, Proceedings of the IEEE Radio Frequency Integrated Circuits Symposium, Phoenix, AZ, 2001, pp. 35-38.
3. A. Joseph, Q. Liu, W. Hodge, P. Gray, K. Stein, R. Previti-Kelly, P. Lindgren, et al., Proceedings of the IEEE BipoIar/BiCMOS Circuits and Technology Meeting, Boston, MA, 2007, pp. 198-201.
4. F. Laermer and A. Urban, Proceedings of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems, Seoul, Korea, 2005, pp. 1118-1121.
5. F. W. Grover, "Tables for the Calculation of the Inductance of Circular Coils of Rectangular Cross Section," Scientific Paper #455, Scientific Papers of the Bureau of Standards 18, 451-487 (1922).
6. R. M. Malladi. M. McPartlin, A. Joseph, H. Lafontaine, and M. Doherty, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Boston, MA, 2007, pp. 58-61.
7. M. Elmala, J. Paramesh, and K. Soumyanath, IEEE J. Solid-State Circuits 41, No. 6, 1323-1332 (2006).