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Volumn 518, Issue 21, 2010, Pages 6022-6029
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Aqueous lateral epitaxy overgrowth of ZnO on (0001) GaN at 90 °c: Part I. Increasing the critical thickness
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Author keywords
Cracking; Critical thickness; Lateral epitaxial overgrowth; Scanning electron microscopy; Solution deposition; Zinc oxide
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Indexed keywords
AQUEOUS SOLUTIONS;
CIRCULAR WINDOWS;
CRITICAL THICKNESS;
ELECTRICAL CHARACTERISTIC;
GAN SUBSTRATE;
GROWTH WINDOW;
HALL EFFECT MEASUREMENT;
HEXAGONAL ARRAYS;
LATERAL EPITAXIAL OVERGROWTH;
LATERAL EPITAXY;
MICROPHOTOLUMINESCENCE;
OPTICAL TRANSMISSIONS;
OPTOELECTRONIC PROPERTIES;
PHOTORESIST MASK;
SOLUTION DEPOSITION;
ZNO;
ZNO THIN FILM;
EPITAXIAL FILMS;
EPITAXIAL GROWTH;
GALLIUM NITRIDE;
HALL EFFECT;
LATTICE MISMATCH;
LIGHT TRANSMISSION;
MAGNETIC FIELD EFFECTS;
MECHANICAL STABILITY;
OPTICAL PROPERTIES;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR QUANTUM WELLS;
SUBSTRATES;
ZINC;
ZINC OXIDE;
GALLIUM ALLOYS;
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EID: 77955557314
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.03.066 Document Type: Article |
Times cited : (8)
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References (27)
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