Structural defects and critical electric field in 3C-SiC

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 431-434

  Capano, M A ^a   Smith, A R ^a   Kim, B C ^a   Kvam, E P ^a   Tsoi, S ^a   Ramdas, A K ^a   Cooper, J A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Characterization; Critical breakdown field; Defects; Strain

Indexed keywords

ELECTRIC FIELDS; EPILAYERS; RAMAN SPECTROSCOPY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRITICAL BREAKDOWN FIELD; HIGH-RESOLUTION X-RAY DIFFRACTOMETRY; PEAK WIDTH; THICK EPILAYERS;

SILICON CARBIDE;

EID: 37849020163     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.431     Document Type: Conference Paper

References (3)

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