Polytype and crystal quality of SiC crystals grown on 3C-SiC by seeded solution method

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 27-30

  Seki, Kazuaki ^a   Tanaka, Ryo ^a   Ujihara, Toru ^a   Takeda, Yoshikazu ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

3C SiC; Polytype; Solution growth; Stacking fault

Indexed keywords

STACKING FAULTS; SUPERCONDUCTING FILMS;

3C-SIC; CRYSTAL QUALITIES; GROWN CRYSTALS; GROWTH PROCESS; POLYTYPES; SEED CRYSTAL; SEEDED SOLUTIONS; SOLUTION GROWTH;

SILICON CARBIDE;

EID: 77955435343     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.27     Document Type: Conference Paper

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