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Volumn 65, Issue 7, 2010, Pages 583-586

Thickness measurement of semiconductor thin films by energy dispersive X-ray fluorescence benchtop instrumentation: Application to GaN epilayers grown by molecular beam epitaxy

Author keywords

EDXRF; Epitaxial layer thickness; Gallium nitride; Semiconductor; Thin film

Indexed keywords

ANALYTICAL VALIDATION; EDXRF; EDXRF ANALYSIS; ENERGY DISPERSIVE X-RAY FLUORESCENCE; EPITAXIAL LAYER THICKNESS; EPITAXIALLY GROWN; GALLIUM NITRIDE THIN FILM; GAN EPILAYERS; GOOD CORRELATIONS; HIGH-TECHNOLOGY PRODUCTS; LAYER THICKNESS; LAYERED SAMPLE; NONDESTRUCTIVE ANALYSIS; OPTICAL REFLECTANCE; RELATIVE STANDARD DEVIATIONS; SAPPHIRE SUBSTRATES; SEMICONDUCTOR THIN FILMS; SINGLE LAYER; SPECTRAL DATA; THICKNESS DETERMINATION; THIN LAYERS;

EID: 77955422319     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2010.05.008     Document Type: Article
Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.