First-principles study of the electronic and the optical properties of In6Se7 compound

Physica B: Condensed Matter

Volumn 405, Issue 16, 2010, Pages 3427-3432

  Ben Nasr, T ^a   Ben Abdallah, H ^a   Bennaceur, R ^a  

^a FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

Author keywords

DFT; Dielectric function; Electronic structure; FP LAPW; GGA; Optical properties; Semiconductors

Indexed keywords

DFT; DIELECTRIC FUNCTIONS; DIRECT BAND GAP; ENERGY RANGES; ENERGY-LOSS SPECTRUM; EXCHANGE-CORRELATION POTENTIAL; EXTINCTION COEFFICIENTS; FIRST-PRINCIPLES STUDY; FP-LAPW; FULL POTENTIAL-LINEARIZED AUGMENTED PLANE WAVES; GENERALIZED GRADIENT APPROXIMATIONS; PARTIAL DENSITY OF STATE;

ABSORPTION SPECTROSCOPY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; LITHIUM BATTERIES; REFRACTIVE INDEX; SEMICONDUCTING SELENIUM COMPOUNDS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 77955307105     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.05.017     Document Type: Article

References (40)

1. K. Ando, and A. Katsui Thin Solids Films 76 1981 141
2. M. Digiulio, G. Micocci, A. Rizzo, and A. Tepore J. Appl. Phys. 54 1983 5839
3. J.F. Sanchez-Royo, A. Segura, O. Lang, A. Chevy, and L. Roa Thin Solids Films 307 1997 283
4. C. Julien, E. Hatzikraniotis, K. Kambas, and A. Chevy Mater. Res. Bull. 20 1985 287
5. C.J. Smith, and C.W. Lowe J. Appl. Phys. 66 1989 5102
6. H. Lee, and D.H. Kang Mater. Sci. Eng. B: Solid State Mater. Adv. Technol 119 2005 196
7. A. Hirohata, J.S. Modera, and G.P. Berera Thin Solids Films 510 2006 247
8. G. Minocci, and A. Tepore Sol. Energy Mater. Sol. Cells 22 1991 215
9. G. Minocci, and A. Tepore Sol. Energy Mater. Sol. Cells 26 1992 159
10. G. Minocci, and A. Tepore Phys. Status Solidi A 148 1995 431
11. G. Slamova, and A. liseev Russ. J. Inorg. Chem. 10 1963 1161
12. T. Guliev, and Z. Medvedeva Russ. J. Inorg. Chem. 7 1965 829
13. K. Imai, K. Suzuki, T. Haga, Y. Hasegwa, and Y. Abe J. Cryst. Growth 54 1981 501
14. T. Massalski CD-Rom, Binary Phase Diagrams 2nd ed. 1996 ASM International
15. J.C. Tednac, G.P. Vassiblev, B. Daovchi, J. Rachidi, and G. Brun Crys. Rech. Technol 4 1977 611
16. M. Epple, M. Panthofer, R. Walther, and H.J. Deiseroth Z. Kristallogr. 215 2000 445
17. Y. Igasaki, H. Yamauchi, and S. Okamura J. Cryst. Growth 112 1991 797
18. J.H.C. Hogg Acta Cryst. B27 1971 1630
19. R. Walther, and H.J. Deiseroth Z. Kristallogr. 210 1995 359
20. S.M. Kitsa, and N.P. Gavaleshko Isv. Akad. Nauk SSSR, Neorg. Mater. 14 1978 955
21. A.F. El Deeb, H.S. Metwally, and H.A. Shehata J. Phys. D: Appl. Phys. 41 2008 125305
22. J. Sandino, and G. Gordillo Surf. Rev. Lett. 9 2002 1687
23. P. Hoenberg, and W. Khon Phys. Rev. B 136 1964 864
24. O.K. Andersen Phys. Rev. B 12 1975 3060
25. D.D. Koelling, and G.O. Arbman J. Phys. F 5 1975 2041
26. P. Balha, K. Schwartz, and G. Madsen Comput. Phys. Commun. 147 2006 71
27. E. Engel, and S.H. Vosko Phys. Rev. B 47 1993 13164
28. F.D. Murnaghan Proc. Natl. Acad. Sci. USA 30 1944 244
29. K. Unger, and H. Newman Phys. Status Solidi (b) 64 1974 117
30. Sadao Adachi, Properties of Group-IV, IIIV and IIVI semiconductors, Wiley Series in Materials for Electronic and Optoelectronic Applications, (2005).
31. C. Ambrosh-Draxl, and J.O. Sofo Comput. Phys. Commun. 175 2006 1
32. P.E. Blochl, O. Jepsen, and O.K. Andersen Phys. Rev. B 49 1994 16223
33. A. Delin, A.O. Eriksson, R. Ahuja, B. Johansson, M.S. Brooks, and T. Gasche Phys. Rev. B 54 1996 1673
34. S. Saha, and T.P. Sinha Phys. Rev. B 62 2000 8828
35. Z. Nabi, A. Kellou, S. Mecabih, A. Khalfi, and N. Benosman Mater. Sci. Eng. B 98 2003 104
36. P. Nozieres Phys. Rev. Lett. 8 1959 1
37. A.A. Al-Ghamdi JKAU: Sci. 19 2007 157
38. N.P. Gavaleshko, M.S. Kitsa, A.I. Savchuk, and R.N. Simchuk Fiz. Tekh. Poluprovodn. 14 1980 1390
39. N.P. Gavaleshko, M.S. Kitsa, A.I. Savchuk, and R.N. Simchuk Sov. Phys. Semicond. 14 1980 822 English Transl
40. J. Sandino, and G. Gordillo Surf. Rev. Lett. 9 2002 1687