Electrical resistance: An atomistic view

Nanotechnology

Volumn 15, Issue 7, 2004, Pages

  Datta, Supriyo ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTORS; ELECTRIC RECTIFIERS; MATRIX ALGEBRA; PARAMETER ESTIMATION; QUANTUM THEORY;

ELECTRON TRANSPORT; ELECTRONIC VERSION; MOLECULAR ELECTRONICS; NANOSCALE ELECTRONS;

ELECTRIC RESISTANCE;

EID: 3142782244     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/7/051     Document Type: Article

References (42)

1. The viewpoint presented here is discussed in more detail in a forthcoming book: Datta S 2004 Quantum Transport: Atom to Transistor (Cambridge University Press) based on a graduate course (see http://dynamo.ecn.purdue.edu/~datta)
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3. More recent references include for example, Bakkers E P A M, Hens Z, Zunger A, Franceschetti A, Kouwenhoven L P, Gurevich L and Vanmaekelbergh D 2001 Shell-tunneling spectroscopy of the single-particle energy levels of insulating quantum dots Nano Lett. 1 551 Niquet Y M, Delerue C, Allan G and Lannoo M 2002 Interpretation and theory of tunneling experiments on single nanostructures Phys. Rev. B 65 165334
4. Niquet Y M, Delerue C, Allan G and Lannoo M 2002 Interpretation and theory of tunneling experiments on single nanostructures Phys. Rev. B 65 165334
5. Conductance quantization is usually discussed in terms of E(k) diagrams. I have not seen it discussed for a single level as we do in section 4 by relating the broadening to the lifetime. But the quantization has been related to the 'uncertainty principle': Batra I P 2002 From uncertainty to certainty in quantum conductance of nanowires Solid State Commun. 124 463-7 (An unpublished elaboration of this argument due to M P Anantram is available on request)
6. The example used to illustrate the importance of the potential profile in determining the current-voltage characteristics in section 5 is related to the experiments discussed in Datta S, Tian W, Hong S, Reifenberger R, Henderson J and Kubiak C P 1997 STM current-voltage characteristics of self-assembled monolayers (SAM's) Phys. Rev. Lett. 79 2530
7. The word 'quantum capacitance' was probably first introduced by Luryi S 1988 Quantum capacitance devices Appl. Phys. Lett. 52 501 and has been used by other authors
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10. Guisinger N P, Greene M E, Basu R, Baluch A S and Hersam M C 2004 Room temperature negative differential resistance through individual organic molecules on silicon surfaces Nano Lett. 4 55 See also the article by Guisinger N P, Basu R, Greene M E, Baluch A S and Hersam M C 2004 Nanotechnology 15 S452-8
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21. Many authors have applied the NEGF formalism to problems involving finite structures. The description presented here is based primarily on
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28. NEGF-based models formalism are also being developed for nanowires, nanotubes and molecules. For a tutorial introduction to the Huckel method for molecular conductors see, Zahid F, Paulsson M and Datta S 2003 Advanced Semiconductors and Organic Nanotechniques ed H Morkoc (Amsterdam: Elsevier Science) chapter (Electrical Conduction through Molecules) and references therein (Other review articles by our group are listed on the Website given in [1])
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42. See for example, Georges A 2004 Strongly correlated electron materials: Dynamical mean-field theory and electronic structure (Preprint cond-mat/0403123)