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Volumn , Issue , 2010, Pages 1699-1702

Development of novel carbon nanotube TSV technology

Author keywords

[No Author keywords available]

Indexed keywords

CHOICE OF FILLER MATERIALS; DESIGN AND DEVELOPMENT; FILLER MATERIALS; HIGH RESISTIVITY; INTEGRATED SYSTEMS;

EID: 77955191177     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490749     Document Type: Conference Paper
Times cited : (21)

References (14)
  • 1
    • 13444256520 scopus 로고    scopus 로고
    • Performance comparison between carbon nanotube and copper interconnects for GSI
    • A. Naeemi, et al., "Performance Comparison Between Carbon Nanotube and Copper Interconnects for GSI," Electron Device Letters, Vol.26, No.2, pp.84-86, 2005
    • (2005) Electron Device Letters , vol.26 , Issue.2 , pp. 84-86
    • Naeemi, A.1
  • 2
    • 19944432253 scopus 로고    scopus 로고
    • Comprehensive study of the resistivity of copper wires with lateral dimensions 100 nm and smaller
    • 023706-1-023706-23707
    • W. Steinhogl, et al., "Comprehensive Study of the Resistivity of Copper Wires With Lateral Dimensions 100 nm and Smaller," J. of Applied Physics, Vol 97, No.2, 023706-1-023706-23707, 2005
    • (2005) J. of Applied Physics , vol.97 , Issue.2
    • Steinhogl, W.1
  • 4
    • 54249156473 scopus 로고    scopus 로고
    • Tungsten through-silicon via technology for three dimensional lsis
    • H. Kikuchi, et. al., "Tungsten Through-Silicon Via Technology for three dimensional LSIs", , Journal of Applied Physics. 47, pp. 2801-2806, 2008.
    • (2008) Journal of Applied Physics , vol.47 , pp. 2801-2806
    • Kikuchi, H.1
  • 5
    • 0035920684 scopus 로고    scopus 로고
    • Reliability and current carrying capacity of carbon nanotube
    • B.Q. Wei, et al., "Reliability and Current Carrying Capacity of Carbon Nanotube," Applied Physics Let.Vol 79, No.8,pp 1172-1174, 2001
    • (2001) Applied Physics Let. , vol.79 , Issue.8 , pp. 1172-1174
    • Wei, B.Q.1
  • 8
    • 50249096787 scopus 로고    scopus 로고
    • F. Kreupl et al., IEDM, 2004, pp. 683-686
    • (2004) IEDM , pp. 683-686
    • Kreupl, F.1
  • 11
    • 0038665264 scopus 로고    scopus 로고
    • A bottom-up approach for carbon nanotube interconnects
    • J. Li, et al., "A bottom-up approach for carbon nanotube interconnects," Appl. Phys. Lett., 82, p. 2491 (2003).
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 2491
    • Li, J.1
  • 12
    • 0041452103 scopus 로고    scopus 로고
    • Growth of isolated carbon nanotubes with lithographically defined diameter and location
    • G.S. Duesberg et al., "Growth of isolated carbon nanotubes with lithographically defined diameter and location," Nano Letters, 3, p. 257 (2003)
    • (2003) Nano Letters , vol.3 , pp. 257
    • Duesberg, G.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.