RRAM switching mechanism

2005 Non-Volatile Memory Technology Symposium, NVMTS05

Volumn , Issue , 2005, Pages 121-124

  Hsu, S T ^a   Zhuang, W W ^a   Li, T K ^a   Pan, W ^a   Ignatiev, A ^b   Papagianni, C ^b   Wu, N J ^b  

^a SHARP LABORATORIES OF AMERICA   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODE EFFECTS; PCMO RRAM MEMORY; POLYCRYSTALLINE PHASE CHANGE;

ELECTRIC FIELD EFFECTS; PHASE SHIFTERS; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; RESISTORS; SINGLE CRYSTALS; SWITCHING CIRCUITS;

RANDOM ACCESS STORAGE;

EID: 33749407012     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMT.2005.1541417     Document Type: Conference Paper

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