Impact ionization rates for Si, GaAs, InAs, ZnS, and GaN in the GW approximation

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 12, 2010, Pages

  Kotani, Takao ^a   Van Schilfgaarde, Mark ^b  

^a TOTTORI UNIVERSITY   (Japan)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77955151640     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.125201     Document Type: Article

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