Influence of capping layers on magnetic anisotropy in Fe/MgO/GaAs(100) ultrathin films

IEEE Transactions on Magnetics

Volumn 44, Issue 11 PART 1, 2008, Pages 2907-2910

  Wong, P K J ^a   Fu, Y ^b   Zhang, W ^a   Zhai, Y ^b   Xu, Y B ^a   Huang, Z C ^b   Xu, Y X ^c   Zhai, H R ^c  

^a UNIVERSITY OF YORK   (United Kingdom)

^b SOUTHEAST UNIVERSITY   (China)

^c NANJING UNIVERSITY   (China)

Author keywords

Magnetic anisotropy; Molecular beam epitaxy; Spintronics; Tunneling barrier

Indexed keywords

EID: 77955117989     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2008.2002195     Document Type: Article

References (29)

1. G. A. Prinz, "Hybrid ferromagnetic-semiconductor structure," Science, vol. 250, pp. 1092-1097, Nov. 1990.
2. S. A. Wolf, D. D. Awschalom, R. A. Burham, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, "Spintronics: A spin-based electronics vision for the future," Science, vol. 294, pp. 1488-1495, Nov. 2000.
3. Y. B. Xu, E. Ahmad, J. S. Claydon, Y. X. Lu, S. S. A. Hassan, I. G.Will, and B. Cantor, "Hybrid magnetic/semiconductor spintronic materials and devices," J. Magn. Magn. Mater., vol. 304, pp. 69-74, Sep. 2006.
4. J. R. Waldrop and R. W. Grant, "Interface chemistry of metal-GaAs Schottky-barrier contacts," Appl. Phys. Lett., vol. 34, pp. 630-632, May 1979.
5. J. J. Krebs, B. T. Jonker, and G. A. Prinz, "Properties of Fe singlecrystal films grown on (100) GaAs by molecular-beam epitaxy," J. Appl. Phys., vol. 61, pp. 2596-2599, Apr. 1987.
6. Y. B. Xu, E. T. M. Kerrnohan, D. J. Freeland, A. Ercole, M. Tselepi, and J. A. C. Bland, "Evolution of the ferromagnetic phase of ultrathin Fe films grown on GaAs(100)-4 × 6," Phys. Rev. B, vol. 58, pp. 890-896, Jul. 1998.
7. J. S. Claydon, Y. B. Xu, M. Tselepi, J. A. C. Bland, and G. van der Laan, "Direct observation of a bulklike spin moment at the Fe/GaAs(100)-4 × 6 interface," Phys. Rev. Lett., vol. 93, pp. 037206-037209, Jul. 2004.
8. C. M. Boubeta, E. Navarro, A. Cebollada, F. Briones, F. Peiro, and A. Cornet, "Epitaxial Fe/MgO heterostructures on GaAs(001)," J. Cryst. Growth, vol. 226, pp. 223-230, Apr. 2001.
9. 0.4 Al thin films epitaxially grown on GaAs substrates," J. Appl. Phys., vol. 101, pp. 063904-1-063904-4, Mar. 2007.
10. X. Jiang, R. Wang, R. Shelby, R. Macfarlane, S. R. Bank, J. S. Harris, and S. S. P. Parkin, "Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100)," Phys. Rev. Lett., vol. 94, pp. 056601-1-056601-4, Feb. 2005.
11. F. Cebollada, A. Hernando-Maneru, A. Hernando, C. Martinez-Boubeta, A. Cebollada, and J. M. Gonzalez, "Anisotropy, hystersis and morphology of self-patterned epitaxial Fe/MgO/GaAs films," Phys. Rev. B, vol. 66, pp. 174410-1-174410-8, Nov. 2002.
12. Y. Lu, J. C. Le Breton, P. Turban, B. Lepine, P. Schieffer, and G. Jezequel, "Band structure of the epitaxial Fe/MgO/GaAs(001) tunnel junction studied by x-ray and ultraviolet photoelectron spectroscopies," Appl. Phys. Lett., vol. 89, pp. 152106-1-152106-3, Oct. 2006.
13. A. Sinsarp, T. Manago, and H. Akinaga, "Electrical spin injection from out-of-plane magnetized FePt/MgO tunneling junction into GaAs at room temperature," Japan. J. Appl. Phys., vol. 46, pt. 2, p. L4, Dec. 2007.
14. T. Manago, A. Sinsarp, and H. Akinaga, "Growth condition dependence of spin-polarized electroluminescence in Fe/MgO/light-emitting diodes," J. Appl. Phys., vol. 102, pp. 083914-1-083914-4, Oct. 2007.
15. 4 on GaAs(100)," Phys. Rev. B, vol. 70, pp. 233304- 1-233304-4, Dec. 2004.
16. 3 thin films by pulsed laser deposition," Appl. Phys. Lett., vol. 60, pp. 1199-1201, Mar. 1992.
17. 3," Appl. Phys. Lett., vol. 60, pp. 3105-3107, Jun. 1992.
18. J. Smit and H. C. Beljers, Philips Res. Rep., vol. 10, p. 113, 1955.
19. G. Bayreuther, M. Dumm, B. Uhl, R. Meier, and W. Kipferl, "Magnetocrystalline volume and interface anisotropies in epitaxial films: Universal relation and Nél's Model (invited)," J. Appl. Phys., vol. 93, pp. 8230-8235, May 2003.
20. L. Néel, "Anisotropie magnétique superficielle et surstructures d'orientation," J. Phys. Radium, vol. 15, pp. 225-239, 1954.
21. E. M. Kneedler, B. T. Jonker, P. M. Thibado, R. J. Wagner, B. V. Shanabrook, and L. J. Whitman, "Influence of substrate surface reconstruction on the growth and magnetic properties of Fe on GaAs(001)," Phys. Rev. B, vol. 56, pp. 8163-8168, Oct. 1997.
22. Y. B. Xu, D. J. Freeland, M. Tselepi, and J. A. C. Bland, "Uniaxial magnetic anisotropy of epitaxial Fe films on InAs(100)-4 × 2 and GaAs(100)-4 × 2," J. Appl. Phys., vol. 87, pp. 6110-6112, May 2000.
23. Y. B. Xu, D. J. Freeland, M. Tselepi, and J. A. C. Bland, "Anisotropic lattice relaxation and uniaxial magnetic anisotropy in Fe/InAs(100)-4 × 2," Phys. Rev. B, vol. 62, pp. 1167-1170, Jul. 2000.
24. O. Durand, J. R. Childress, P. Galtier, R. Bisaro, and A. Schuhl, "Origin of the uniaxial magnetic anisotropy in Fe films grown by molecular beam epitaxy," J. Magn. Magn. Mater., vol. 145, pp. 111-117, Sep. 1995.
25. K. Postava, H. Jaffres, A. Schuhl, F. Nguyen Van Dau, M. Goiran, and A. R. Fert, "Linear and quadratic magneto-optical measurements of the spin reorientation in epitaxial Fe films on MgO," J. Magn. Magn. Mater., vol. 172, pp. 199-208, Feb. 1997.
26. S. M. Jordan, J. F. Lawler, R. Schad, and H. van Kempen, "Growth temperature dependence of the magnetic and structural properties of epitaxial Fe layers on MgO(001)," J. Appl. Phys., vol. 84, pp. 1499-1503, Aug. 1998.
27. M. Madami, S. Tacchi, G. Carlotti, G. Gubbiotti, and R. L. Stamps, "In situ Brillouin scattering study of the thickness dependence of magnetic anisotropy in uncovered and Cu-covered Fe/GaAs(100) ultrathin films," Phys. Rev. B, vol. 69, p. 144408, Apr. 2004.
28. S. Tacchi, A. Stollo, G. Gubbiotti, G. Carlotti, M. Kǒsuth, and H. Ebert, "Influence of Au capping layer on the magnetic properties of Fe/GaAs(001) ultrathin films," Surf. Sci., vol. 601, pp. 4311-4315, May 2007.
29. S. Mc. Phail, C. M. Gurtler, F. Montaigne, Y. B. Xu, M. Tselepi, and J. A. C. Bland, "Interface bonding versus strain-induced magnetic anisotropy in epitaxial Fe/semiconductor structures," Phys. Rev. B, vol. 67, pp. 024409-1-24409-5, Jan. 2003.