New source/drain hot carrier injection disturbance of NAND flash devices

Journal of the Korean Physical Society

Volumn 56, Issue 1, 2010, Pages 142-146

  Choi, Byung Yong ^a   Sung, Suk Kang ^a   Park, Se Jun ^a   Kim, Tae Hun ^a   Kim, Mincheol ^a   Lee, Se Hoon ^a   Kim, Min Jeong ^a   Kwon, Sung Hyun ^a   Jang, Dong Hoon ^a   Yu, Min Tai ^a   Hwang, Mi So ^a   Park, Mincheol ^a   Lee, Choong Ho ^a   Kim, Keonsoo ^a   Choi, Jungdal ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Channel boosting; Fowler Nordhcim; Gate induced drain lowering; Hot carrier disturbance; NAND flash memory; Vpass window; Vpgm disturbance

Indexed keywords

EID: 77954841810     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.56.142     Document Type: Article

References (9)

1. I. H. Cho, B. G. Park, J. D. Lee, T-S. Park, S. Y. Choi and J. H. Lee, J. Korean Phys. Soc. 44, 83 (2004).
2. K. Ichikawa, P. Punchaipetch, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, A. Tomyo, E. Takahashi, T. Hayashi and K. Ogata, J. Korean Phys. Soc. 49, 569 (2006).
3. Y. M. Kim, K-H. Park, K.-R. Han, B.-K. Choi, S.-G. Jung and J.-H. Lee, J. Korean Phys. Soc. 53, 3411 (2008).
4. S. Lee, J.-H. Jeong and B.-K. Cheong, J. Semiconductor Tech. Sci. 8, 1 (2008).
5. Y. J. Park, H. J. Jeong, J. Chang, S. J. Kang and C. Park, J. Semiconductor Tech. Sci. 8, 51 (2008).
6. K. D. Suh., B.-H. Suh, Y.-H. Lim, J.-K. Kim, Y.-J. Choi, Y.-N. Koh, S.-S. Lee, S.-C. Kwon, B.-S. Choi, J.-S. Yum, J.-H. Choi, J.-R. Kim and H.-K. Lim, IEEE J. Solid-State Circuits 30, 1149 (1995).
7. J.-W. Lee, Y.-T. Lee, T. Cho, S. Lee, D.-H. Kim, W.-G. Hahn, Y.-H. Lim and K.-D. Suh, J. Semiconductor Tech. Sci. 1, 125 (2001).
8. J. D. Lee, C.-K. Lee, M.-W. Lee, H-S. Kim, K.-C. Park and W.-S. Lee, NVSMW Tech. Dig. (Monterey, 2006), p. 31.
9. A. Ghetti, A. Benvenuti, G. Molteni, S. Alberici, V. Soncini and A. Pavan, IEDM Tech. Dig. (San Francisco, 2004), p. 983.