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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1615-1619

Homoepitaxy of ZnO on bulk and thin film substrates by low temperature metal organic chemical vapor deposition using tert-butanol

(8) Sartel, C a Sallet, V a Lusson, A a Haneche, N a Laroche, J M a Galtier, P a Rogers, D J b Hosseini Teherani, F b

a LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT (France)

b 8 Route de Chevreuse France (France)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; DEPOSITION; EPITAXIAL GROWTH; EPITAXIAL LAYERS; FILM GROWTH; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; ORGANIC CHEMICALS; ORGANIC LASERS; ORGANOMETALLICS; PULSED LASER DEPOSITION; SAPPHIRE; SURFACE MORPHOLOGY; SURFACE ROUGHNESS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE;

BULK SUBSTRATES; C-SAPPHIRE; CARRIER GAS; CRYSTALLINE QUALITY; CRYSTALLOGRAPHIC QUALITY; HETEROEPITAXIAL GROWTH; HOMOEPITAXIAL GROWTH; HOMOEPITAXY; LOW TEMPERATURES; LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; MOCVD GROWTH; SIGNIFICANT IMPACTS; TERT BUTANOL; THIN FILM SUBSTRATE; ZNO; ZNO LAYERS;

SUBSTRATES;

EID: 77954615969 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3137016 Document Type: Conference Paper

Times cited : (5)

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