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Volumn 80, Issue 20, 2009, Pages

Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

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EID: 77954768949     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.205206     Document Type: Article
Times cited : (43)

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    • note
    • R is the transition rate of an electron from phosphorus to the interface levels when S and S 1 form a spin singlet. The transition rate α exp [- r (a B * - 1 + a i - 1)], where r is the distance between a phosphorus and an interface state and a B * (a i) is the effective Bohr radius of phosphorus (interface) state. It is averaged with the weight of P (r) = - d d r exp (- 4 π r 3 n D / 3), where n D is the donor concentration.
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    • On the other hand, the transition probabilities of |1〉 ⇔ |2〉, |1〉 ⇔ |3〉, and |3〉 ⇔ |4〉 are proportional to β2 , α2, and β2, respectively.
    • On the other hand, the transition probabilities of | 1 〉 ⇔ | 2 〉, | 1 〉 ⇔ | 3 〉, and | 3 〉 ⇔ | 4 〉 are proportional to β 2, α 2, and β 2, respectively.
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    • ) 2.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.