Interface-phonon-limited two-dimensional mobility in AlGaN/GaN heterostructures

Journal of Applied Physics

Volumn 100, Issue 12, 2006, Pages

  Mora Ramos, M E ^a   Tutor, J ^b   Velasco, V R ^c  

^a UNIVERSIDAD AUTÓNOMA DEL ESTADO DE MORELOS   (Mexico)

^b Advanced Products España S L   (Spain)

^c INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GALLIUM NITRIDE; HAMILTONIANS; PHONONS;

CONDUCTION BANDS; ELECTRON-PHONON ABSORPTION; HAMILTONIAN MATRIX ELEMENTS;

HETEROJUNCTIONS;

EID: 33846037281     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2400508     Document Type: Article

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