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Volumn 21, Issue 7, 2010, Pages 692-697
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The substrate temperature dependent electrical properties of titanium dioxide thin films
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Author keywords
[No Author keywords available]
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Indexed keywords
ACCEPTOR CONCENTRATIONS;
BAND CONDUCTION;
BARRIER HEIGHTS;
COMPENSATION RATIO;
CONDUCTION CHANNEL;
CONDUCTION MECHANISM;
CONDUCTION MODELS;
DC SPUTTERING;
DENSITY OF STATE;
DONOR CONCENTRATIONS;
ELECTRICAL PARAMETER;
ELECTRICAL PROPERTY;
ELECTRICAL RESISTIVITY;
ELECTRICAL RESISTIVITY MEASUREMENTS;
GRAIN BOUNDARY SCATTERING;
HEATED GLASS SUBSTRATES;
HOPPING PARAMETERS;
MATERIAL PROPERTY;
NEAREST NEIGHBOR HOPPING;
POTENTIAL BARRIERS;
SUBSTRATE TEMPERATURE;
TEMPERATURE DEPENDENCE;
TEMPERATURE RANGE;
TITANIUM DIOXIDE THIN FILM;
VARIABLE-RANGE HOPPING CONDUCTION;
ELECTRIC CONDUCTIVITY;
ELECTRIC NETWORK ANALYSIS;
GRAIN BOUNDARIES;
GRAIN SIZE AND SHAPE;
MODELS;
OXIDES;
TEMPERATURE DISTRIBUTION;
THIN FILMS;
TITANIUM;
TITANIUM DIOXIDE;
SUBSTRATES;
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EID: 77954622929
PISSN: 09574522
EISSN: 1573482X
Source Type: Journal
DOI: 10.1007/s10854-009-9979-z Document Type: Article |
Times cited : (14)
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References (23)
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