Response of the capacitance of a planar La0.67Ca0.33MnO3/SrTiO3/La0.67Ca0.33MnO3 heterostructure to an electric field

Physics of the Solid State

Volumn 52, Issue 7, 2010, Pages 1439-1443

  Boǐkov, Yu A ^a   Danilov, V A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954446565     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/S106378341007019X     Document Type: Article

References (21)

1. M. Pannetier, C. Fermon, G. Le Goff, J. Simola, and T. Kerr, Science (Washington) 304(5677), 1648 (2004).
2. X. Chen, N. J. Wu, J. Strozier, and A. Ignatiev, Appl. Phys. Lett. 87(23), 233506 (2005).
3. Yu. A. Boikov and T. Claeson, Phys. Rev. B: Condens. Matter 70(18), 184433 (2004).
4. A. Baikalov, Y. Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y. Y. Sun, Y. Y. Xue, and C. W. Chu, Appl. Phys. Lett. 83(5), 957 (2003).
5. Yu. A. Boikov, R. Gunnarsson, and T. Claeson, J. Appl. Phys. 96(1), 435 (2004).
6. A. Ohtomo and H. Y. Hwang, Nature (London) 427(6973), 423 (2004).
7. Yu. A. Boikov, B. M. Goltsman, V. K. Yarmarkin, and V. V. Lemanov, Appl. Phys. Lett. 78(24), 3866 (2001).
8. H. L. Ju, K. M. Krishnan, and D. Leberman, J. Appl. Phys. 83(11), 7073 (1998).
9. N.-C. Yeh, R. P. Vasquez, J. Huynh, S. M. Maurer, G. Beach, and D. A. Beam, J. Appl. Phys. 81(8), 5499 (1997).
10. S. Thiel, G. Hammerl, A. Schmehl, C. W. Schneider, and J. Mannhart, Science (Washington) 313(5795), 1942 (2006).
11. C. J. Lu, Z. L. Wang, C. Kwon, and Q. X. Jia, J. Appl. Phys. 88(7), 4032 (2000).
12. D. Y. Wang, J. Wang, H. L. W. Chan, and C. L. Choy, J. Appl. Phys. 101(4), 043515-1 (2007).
13. R. W. J. Wyckoff, Crystal Structure, 2nd ed. (Wiley, New York, 1964), Vol. 2, p. 394.
14. B. C. Chakoumakos, D. G. Scholm, M. Urbanik, and J. Luine, J. Appl. Phys. 83(4), 1979 (1998).
15. D. Dai, J. Zhang, H. A. Mook, S.-H. Lion, P. A. Dowben, and E. W. Plummer, Phys. Rev. B: Condens. Matter 54(6), R3694 (1996).
16. R. C. Neville, B. Hoeneisen, and C. A. Mead, J. Appl. Phys. 43(5), 2124 (1972).
17. H. Y. Ku and F. G. Ullman, J. Appl. Phys. 35(2), 265 (1964).
18. R. Smith, Semiconductors, 2nd ed. (Cambridge University Press, Cambridge, 1978; Mir, Moscow, 1982), p. 241.
19. D. W. Reagon, S. Y. Lee, Y. Li, and Q. X. Jia, J. Appl. Phys. 95(12), 7971 (2004).
20. J. Robertson, J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. Process., Meas., Phenom. 18(3), 1785 (2000).
21. Yu. A. Boikov and V. A. Danilov, Pis'ma Zh. Tekh. Fiz. 31(1), 73 (2005) [Tech. Phys. Lett. 31 (1), 36 (2005)].