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Volumn 96, Issue 26, 2010, Pages

Reduction in the efficiency droop effect of a light-emitting diode through surface plasmon coupling

Author keywords

[No Author keywords available]

Indexed keywords

COUPLING EFFECT; CURRENT SPREADING; EPITAXIAL STRUCTURE; EXTERNAL QUANTUM EFFICIENCY; GRID PATTERN; INGAN/GAN; INJECTION CURRENT DENSITY; QUANTUM WELL; SURFACE PLASMON COUPLING; SURFACE PLASMONS;

EID: 77954346640     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3459151     Document Type: Article
Times cited : (61)

References (14)
  • 1
    • 35648955103 scopus 로고    scopus 로고
    • Defect related issues in the current roll-off in InGaN based light emitting diodes
    • DOI 10.1063/1.2801704
    • B. Monemar and B. E. Sernelius, Appl. Phys. Lett. APPLAB 0003-6951 91, 181103 (2007). 10.1063/1.2801704 (Pubitemid 350037159)
    • (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 181103
    • Monemar, B.1    Sernelius, B.E.2
  • 2
    • 33847133002 scopus 로고    scopus 로고
    • Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates
    • DOI 10.1063/1.2432307
    • K. Akita, T. Kyono, Y. Yoshizumi, H. Kitabayashi, and K. Katayama, J. Appl. Phys. JAPIAU 0021-8979 101, 033104 (2007). 10.1063/1.2432307 (Pubitemid 46280803)
    • (2007) Journal of Applied Physics , vol.101 , Issue.3 , pp. 033104
    • Akita, K.1    Kyono, T.2    Yoshizumi, Y.3    Kitabayashi, H.4    Katayama, K.5
  • 6
    • 35648940727 scopus 로고    scopus 로고
    • Efficiency droop behaviors of InGaNGaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
    • DOI 10.1063/1.2805197
    • Y. L. Li, Y. R. Huang, and Y. H. Lai, Appl. Phys. Lett. APPLAB 0003-6951 91, 181113 (2007). 10.1063/1.2805197 (Pubitemid 350037169)
    • (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 181113
    • Li, Y.-L.1    Huang, Y.-R.2    Lai, Y.-H.3
  • 12
    • 35548953755 scopus 로고    scopus 로고
    • Surface plasmon coupling effect in an InGaNGaN single-quantum-well light-emitting diode
    • DOI 10.1063/1.2802067
    • D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, Appl. Phys. Lett. APPLAB 0003-6951 91, 171103 (2007). 10.1063/1.2802067 (Pubitemid 350015199)
    • (2007) Applied Physics Letters , vol.91 , Issue.17 , pp. 171103
    • Yeh, D.-M.1    Huang, C.-F.2    Chen, C.-Y.3    Lu, Y.-C.4    Yang, C.C.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.