Epitaxial growth of znmgte with a wide composition range on ZnTe substrate by molecular beam epitaxy

Journal of Physics: Conference Series

Volumn 100, Issue PART 4, 2008, Pages

  Tanaka, Tooru ^a   Saito, Katsuhiko ^a   Nishio, Mitsuhiro ^a   Guo, Qixin ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LAYERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SUBSTRATES; ZINC; ZINC COMPOUNDS; ZINC SULFIDE; II-VI SEMICONDUCTORS; MAGNESIUM; NANOSCIENCE; TELLURIUM COMPOUNDS; VACUUM APPLICATIONS;

COMPOSITION RANGES; FLUX RATIO; ZINC-BLENDE STRUCTURES;

EPITAXIAL GROWTH; ZINC COMPOUNDS;

EID: 77954330701     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/100/4/042018     Document Type: Conference Paper

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