Mass production worthy MIM capacitor on gate polysilicon(MIM-COG) structure using HfO2/HfOxCyNz/HfO2 dielectric for analog/RF/mixed signal application

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 993-996

  Park, Jung Min ^a   Song, Min Woo ^a   Kim, Weon Hong ^a   Park, Pan Kwi ^a   Jung, Yong Kuk ^a   Kim, Ju Youn ^a   Won, Seok Jun ^a   Lee, Jong Ho ^a   Lee, Nae In ^a   Kang, Ho Kyu ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; ELECTRIC CURRENTS; ELECTRIC EQUIPMENT; ELECTRON DEVICES; ENERGY STORAGE; HAFNIUM COMPOUNDS; MACHINE TOOLS; POLYSILICON; PRODUCTION ENGINEERING;

M-I-M CAPACITORS; MASS-PRODUCTION;

MIM DEVICES;

EID: 50249093233     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419121     Document Type: Conference Paper

References (4)

1. Y-K Jeong, et al., Symp. VLSI Tech. Dig. (2004), p.222
2. S-J Ding, et al., Elect. Dev. Lett. (2003), Vol. 24, Issue 12, p.730
3. H. Hu, et al., IEDM Tech. Dig. (2003), p.15.6.1
4. K. Takeda, et al., IEDM Tech. Dig. (2006), p.13.3.1