Photoelectrochemical performances of n-CdS1-xSex thin films prepared by spray pyrolysis technique

Solar Energy

Volumn 84, Issue 8, 2010, Pages 1445-1452

  Yadav, A A ^a   Masumdar, E U ^a  

^a Department of Physics   (India)

Author keywords

Chalcogenides; Efficiency; Fill factor; Photoelectrochemical cells; Spray pyrolysis

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CDS; COATED GLASS SUBSTRATES; CURRENT VOLTAGE; ELECTRODE COMPOSITION; ELECTRODE/ELECTROLYTE INTERFACES; FILL FACTOR; JUNCTION CAPACITANCES; PHOTOELECTROCHEMICAL PERFORMANCE; PHOTOVOLTAIC POWER; REDOX ELECTROLYTES; SPRAY-PYROLYSIS TECHNIQUES;

AMORPHOUS FILMS; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CAPACITANCE; CONVERSION EFFICIENCY; CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; ELECTROCHEMICAL PROPERTIES; ENERGY CONVERSION; INORGANIC COMPOUNDS; OPEN CIRCUIT VOLTAGE; PHOTOELECTROCHEMICAL CELLS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; SWITCHING CIRCUITS; THIN FILMS;

SPRAY PYROLYSIS;

CURRENT; ELECTROCHEMICAL METHOD; ELECTROLYTE; PHOTOVOLTAIC SYSTEM; PYROLYSIS; REDOX POTENTIAL;

EID: 77954312451     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2010.05.006     Document Type: Article

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